HMC323 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – HBT DRIVER AMPLIFIER DC - 3.0 GHz

MICROWAVE CORPORATION
HMC323
HBT DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1100
Features
P1dB Output Power: + 16 dBm
1
Output IP3: +31 dBm
Single Supply: 8.75V
Ultra Small SOT26 Package
General Description
The HMC323 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single Vcc supply. The surface
mount SOT26 amplifier can be used as a broad-
band gain stage or used with external matching
for optimized narrow band applications. The
HMC323 offers 13 dB of gain and +19 dBm of
saturated power while only requiring 57 mA from
a 8.75V supply. Using a Darlington feedback
pair results in reduced sensitivity to normal
process variations and provides a good 50-ohm
input/output port match. This amplifier is ideal for
RF systems where high linearity is required
such as 2.2 - 2.7 GHz MMDS.
Guaranteed Performance, -40 to +60 deg C
Parameter
Frequency Range
Gain @ 25 °C
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Noise Figure
Supply Current (Icc)
Vs= 8.75V, RBIAS= 22 Ohm
Min.
Typ.
Max.
DC - 3.0
10
13
16
0.015
0.025
8
13
6
9
16
20
13
16
16
19
28
31
6
57
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dB
mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1 - 150
Fax: [phone]
Web Site: www.hittite.com