HMC315_05 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz

v02.0605
HMC315 / 315E
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
Typical Applications
The HMC315 / HMC315E is ideal for:
• Fiber Optic OC-48 Systems
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Features
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC315 & HMC315E are ultra broadband GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single positive supply.
The surface mount SOT26 amplifier can be used as a
broadband gain stage, or used with external match-
ing for optimized narrow band applications. The Dar-
lington configuration results in reduced sensitivity to
normal process variations and provides a good 50-
ohm input/output port match. The amplifier provides
15 dB of gain and +17 dBm of saturated power while
operating from a single positive +7V supply.
8 - 68
Electrical Specifications, T_A = +25° C, As a Function of Vcc
Parameter
Vcc = +5V
Min.
Typ.
Max.
Min.
Frequency Range
Gain
DC - 7
11
14
17
11
Gain Variation over Temperature
0.015
0.025
Input Return Loss
7
10
7
Output Return Loss
3
7
3
Reverse Isolation
18
21
18
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
8
11
13
Saturated Output Power (Psat) @ 1.0 GHz
10
13
15
Output Third Order Intercept (OIP3) @ 1.0 GHz
23
26
30
Noise Figure
6.5
Supply Current (Icc)
30
Vcc = +7V
Typ.
DC - 7
15
0.015
10
7
21
16
17.5
33
6.5
50
Max.
18
0.025
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com