HMC314_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz

v02.0802
HMC314
8
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
UED _{Typical Applications}
Features
TIN ^{Ideal Broadband Gain Stage for:}
P1dB Output Power: +18 dBm
N ^{• 2.2 - 2.7 GHz MMDS}
Output IP3: +29 dBm
ISCO ^{T • 3.5 GHz Wireless Local Loop}
Gain: 12 dB
D _{PRODUC Not Recommended for New} ^{Designs • Low Profile Portable Wireless Devices}
• WLAN Systems
Functional Diagram
Single Supply: 5V
Ultra Small Package: SOT26
General Description
The HMC314 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that oper-
ates from a single positive supply. This amplifier
also incorporates a power down feature. When
the “Vpd” pin is held low, the amplifier will shut
down. The surface mount SOT26 amplifier can be
used as a broadband gain stage for wideband
applications. The amplifier provides 12 dB of gain
and +22 dBm of saturated power while operating
from a single positive +5v supply. The HMC314 is
packaged in an ultra small SOT26 package at a
height of only 1.45mm.
8-1
Electrical Specifications, T_A = +25° C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Switching Speed
Supply Current (Icc)
Control Voltage (Vpd)
Control Current (Ipd)
On/Off
Vs = +5V, Rbias = 10 Ohm
Min.
Typ.
Max.
0.7 - 4.0
7
12
16
0.015
0.025
6
12
2
6
22
30
15
18
19
22
26
29
60
150
0/5
.001/12
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
ns
mA
Volts
mA
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