HMC314 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 0.7 - 4.0 GHz

v02.0802
MICROWAVE CORPORATION
HMC314
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 0.7 - 4.0 GHz
8
Typical Applications
Ideal Broadband Gain Stage for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• Low Profile Portable Wireless Devices
• WLAN Systems
Features
P1dB Output Power: +18 dBm
Output IP3: +29 dBm
Gain: 12 dB
Single Supply: 5V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC314 is a GaAs InGaP Heterojunction Bipo-
lar Transistor (HBT) MMIC amplifier that operates
from a single positive supply. This amplifier also
incorporates a power down feature. When the “Vpd”
pin is held low, the amplifier will shut down. The
surface mount SOT26 amplifier can be used as a
broadband gain stage for wideband applications.
The amplifier provides 12 dB of gain and +22 dBm
of saturated power while operating from a single
positive +5v supply. The HMC314 is packaged in
an ultra small SOT26 package at a height of only
1.45mm.
Electrical Specifications, T_A = +25° C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Switching Speed
Supply Current (Icc)
Control Voltage (Vpd)
Control Current (Ipd)
On/Off
Vs = +5V, Rbias = 10 Ohm
Min.
Typ.
Max.
0.7 - 4.0
7
12
16
0.015
0.025
6
12
2
6
22
30
15
18
19
22
26
29
60
150
0/5
.001/12
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
ns
mA
Volts
mA
8 - 74
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com