HMC313_07 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

v04.0307
HMC313 / 313E
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
5
Typical Applications
Ideal as a Driver & Amplifier for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN
Features
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply. The
surface mount SOT26 amplifier can be used as a
broadband gain stage or used with external matching
for optimized narrow band applications. With Vcc
biased at +5V, the HMC313 & HMC313E offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
5 - 28
Electrical Specifications, T_A = +25 °C, Vcc = +5.0V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
Noise Figure
Supply Current (Icc)
Note: Data taken with broadband bias tee on device output.
Vcc = +5V
Min.
Typ.
Max.
DC - 6
14
17
20
0.02
0.03
7
6
30
11
14
15
24
27
6.5
50
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA