HMC283LM1_01 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz

v04.1201
Typical Applications
The HMC283LM1 is ideal for:
• Millimeterwave Point-to-Point Radios
6
• LMDS
• SATCOM
Functional Diagram
HMC283LM1
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 17 - 40 GHz
Features
SMT mmWave Package
Psat Output Power: +21 dBm
High Gain: 21 dB
No External Matching Required
General Description
The HMC283LM1 is a Medium Power Amplifier (MPA)
in a SMT leadless chip carrier package covering 17
to 40 GHz. The LM1 is a true surface mount broadband
millimeterwave package offering low loss & excel-
lent I/O match preserving MMIC chip performance.
Utilizing a GaAs PHEMT process, the device offers
20 dB gain and +21 dBm ouput power from a bias
supply of +3.5V @ 300mA. As an alternative to chip-
and-wire hybrid assemblies the HMC283LM1 elimi-
nates the need for wirebonding, thereby providing
a consistent connection interface for the customer.
The amplifier may be used as a frequency doubler.
A built-in-test pad (Vdet) allows monitoring of micro-
wave output power. All data is with the non-hermetic,
epoxy sealed LM1 packaged MPA device mounted in
a 50 ohm test fixture.
6-2
Electrical Specifications, T_A = +25° C, Vdd= +3.5V*, ldd = 300 mA
Frequency Range
Gain
Parameter
Min.
Typ.
Max.
Min.
Typ.
17 - 40
21 - 30
15
20
17
22
Gain Variation over Temperature
0.05
0.07
0.05
Input Return Loss
6
10
6
12
Output Return Loss
4
7
4
8
Reverse Isolation
30
40
35
45
Output Power for 1 dB Compression (P1dB)
14
18
14
18
Saturated Output Power (Psat)
17
21
17
21
Output Third Order Intercept (IP3)
22
27
21
27
Noise Figure
10
10
Supply Current (Idd)
300
330
300
*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
Max.
0.07
330
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com