HMC283 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

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MICROWAVE CORPORATION
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Typical Applications
The HMC283 MPA is ideal for:
• Millimeterwave Point-to-Point Radios
• VSAT
• SATCOM
Functional Diagram
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Features
High Gain: 21 dB
Psat Output Power: +21 dBm
Wideband Performance: 17 - 40 GHz
Small Chip Size: 0.88 mm x 1.72 mm
General Description
The HMC283 chip is a four stage GaAs MMIC
Medium Power Amplifier (MPA) which covers the fre-
quency range of 17 to 40 GHz. The chip can easily
be integrated into Multi-Chip Modules (MCMs) due
to its small (1.62 mm²) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain and +21 dBm
output power from a bias supply of +3.5V @ 300mA.
The HMC283 may be used as a frequency doubler.
A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring
microwave output power. All data is with the chip
in a 50 ohm test fixture connected via 0.076mm x
0.0127mm (3mil x 0.5mil) ribbon bonds of minimal
length 0.31mm (<12mils).
Electrical Specifications, T_A = +25° C, Vdd= +3.5V*, ldd = 300 mA
Parameter
Min.
Typ.
Max.
Frequency Range
17 - 40
Gain
16
21
Gain Flatness (Any 1 GHz BW)
±0.8
Input Return Loss
9
Output Return Loss
6
Reverse Isolation
40
50
Output Power for 1 dB Compression (P1dB)
14
18
Saturated Output Power (Psat)
17
21
Output Third Order Intercept (IP3)
21
26
Noise Figure
10
14
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
300
400
*Vdd = Vd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
1 - 10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com