HMC282 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

MICROWAVE CORPORATION
HMC282
GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz
FEBRUARY 2001
V01.0700
Features
General Description
NOISE FIGURE: 3.5 dB
The HMC282 chip is a four stage GaAs MMIC
1
Low Noise Amplifier (LNA) which covers the
STABLE GAIN vs. TEMPERATURE: 26dB ± 1.2dB _{frequency range of 36 to 40 GHz. The chip can}
SMALL SIZE: 1.11 mm x 2.07 mm
easily be integrated into Multi-Chip Modules
(MCMs) due to its small (2.30 mm²) size. The
IDEAL FOR 38 GHz RADIOS, E1 & T1
chip utilizes a GaAs PHEMT process offering 26
dB gain from a bias supply of +3.5V @ 90 mA with
a noise figure of 3.5 dB. This LNA can be used in
millimeterwave point-to-point radios, VSAT, and
other SATCOM applications. All data is with the
chip in a 50 ohm test fixture connected via ribbon
bonds of minimal length. The HMC282 may be
used in conjunction with the HMC259 mixer to
realize a millimeterwave system receiver.
Guaranteed Performance, Vdd = +3.5V*, Idd = 90mA, -55 to +85 deg C
Parameter
Min.
Typ.
Max.
Frequency Range
36 - 40
Gain
21
27
Gain Flatness (Any 1Ghz BW)
±1
Noise Figure
3.8
5.8
Input Return Loss
7
Output Return Loss
5
Reverse Isolation
40
46
Output Power for 1dB Compression (P1dB)
5
9
Saturated Output Power (Psat)
12
Output Third Order Intercept (IP3)
18
25
Supply Voltage (Vdd)
3.25
3.5
3.75
Gate Bias Voltage (Vg1, 2 & Vg3, 4)
-0.45 / -0.3
Supply Current (Idd)
(Vdd = +3.5V, Vg1, 2, 3, 4 = -0.15V Typ.)
90
140
* Vdd = +3.5V , adjust Vg1, 2 & Vg3, 4 between-2.0 to +0.4V to achieve Idd = 90 mA typical.
Min.
Typ.
Max. Units
37 - 39
GHz
21
26
dB
±1
dB
3.5
5.3
dB
6
dB
5
dB
40
46
dB
5
9
dBm
12
dBm
21
27
dBm
3.25
3.5
3.75 Vdc
-0.45 / -0.3
Vdc
90
140 mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1 - 60
Fax: [phone]
Web Site: www.hittite.com