HMC281_00 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

v02.0500
MICROWAVE CORPORATION
Typical Applications
1
The HMC281 LNA is ideal for:
• Millimeterwave Point-to-Point Radios
• LMDS
• VSAT & SATCOM
Functional Diagram
HMC281
GaAs MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Features
Excellent Noise Figure: 2.5 dB
Stable Gain vs. Temperature: 22 dB ± 2 dB
Wideband Performance: 18 - 32 GHz
Small Size: 0.97 mm x 1.67 mm
General Description
The HMC281 chip is a three stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 18 to 32 GHz. The chip
can easily be integrated into Multi-Chip Modules
(MCMs) due to its small (1.62 mm²) size. The chip
utilizes a GaAs PHEMT process offering 22 dB
gain from a bias supply of +3.5V @ 60mA with a
noise figure of 2.5 dB. All data is with the chip in
a 50 ohm test fixture connected via ribbon bonds
of minimal length. The HMC281 may be used in
conjunction with HMC143, HMC203, HMC258,
HMC264, or HMC265 mixers to realize a micro-
wave or millimeterwave system receiver.
Electrical Specifications, T_A = +25° C, Vdd= +3.5V*, ldd = 60 mA
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
18 - 24
24 - 32
Gain
17
22
15
20
Gain Flatness (Any 1 GHz BW)
±1
±1
Noise Figure
2.5
4
3.2
Input Return Loss
13
6
Output Return Loss
10
7
Reverse Isolation
40
45
42
52
Output Power for 1 dB Compression (P1dB)
5
9
6
10
Saturated Output Power (Psat)
8
12
8.5
12
Output Third Order Intercept (IP3)
17
22
20
25
Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)
60
100
60
*Vdd = Vd1, 2, 3 connected to +3.5V, adjust Vgg = Vg1, 2 between -2.0 to +0.4V to achieve ldd =60 mA typical.
Max.
4.7
100
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]