HMC281 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz

MICROWAVE CORPORATION
HMC281
GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz
FEBRUARY 2001
Features
General Description
V02.0500
EXCELLENT NOISE FIGURE: 2.5 dB
The HMC281 chip is a three stage GaAs MMIC
1
Low Noise Amplifier (LNA) which covers the
STABLE GAIN vs. TEMPERATURE: 22 dB ± 2 dB ^{frequency range of 18 to 32 GHz. The chip can}
easily be integrated into Multi-Chip Modules
WIDEBAND PERFORMANCE: 18 - 32 GHz
(MCMs) due to its small (1.62 mm²) size. The
chip utilizes a GaAs PHEMT process offering 22
dB gain from a bias supply of +3.5V @ 60mA with
SMALL SIZE: 0.97 mm x 1.67 mm
a noise figure of 2.5 dB. This LNA can be used in
millimeterwave point-to-point radios, LMDS,
VSAT, and other SATCOM applications. All data
is with the chip in a 50 ohm test fixture connected
via ribbon bonds of minimal length. The HMC281
may be used in conjunction with HMC143,
HMC203, HMC258, HMC264, or HMC265 mix-
ers to realize a microwave or millimeterwave
system receiver.
Guaranteed Performance, Vdd = +3.5V*, Idd = 60mA, -55 to +85 deg C
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
18 - 24
24 - 32
Gain
17
22
15
20
Gain Flatness (Any 1Ghz BW)
±1
±1
Noise Figure
2.5
4
3.2
4.7
Input Return Loss
13
6
Output Return Loss
10
7
Reverse Isolation
40
45
42
52
Output Power for 1dB Compression (P1dB)
5
9
6
10
Saturated Output Power (Psat)
8
12
8.5
12
Output Third Order Intercept (IP3)
17
22
20
25
Supply Voltage (Vdd1, 2, 3)
3.25 3.5 3.75 3.25 3.5 3.75
Gate Bias Voltage (Vg1 & Vg2, 3)
-0.25
-0.25
Supply Current (Idd) (Vdd = +3.5V, Vgg = -0.15V Typ.)
60
100
60
100
* Vdd = Vd1, 2, 3 connected to +3.5V , adjust Vgg = Vg1, 2, 3 between-2.0 to +0.4V to achieve Idd =60 mA typical.
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
Vdc
Vdc
mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1 - 54
Fax: [phone]
Web Site: www.hittite.com