HMC280MS8G_05 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC POWER AMPLIFIER 5.0 - 6.0 GHz

HMC280MS8G / 280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
Typical Applications
The HMC280MS8G / HMC280MS8GE is ideal for:
• UNII & HiperLAN
• ISM
Features
Psat Output Power: +24 dBm
Output IP3: +38 dBm
High Gain: 18 dB
Single Supply: +3.6V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC280MS8G & HMC280MS8GE are +3.6V
GaAs MMIC power amplifiers covering 5 to 6 GHz.
The device is packaged in a low cost, surface mount
8 lead MSOP plastic package with an exposed base
paddle for improved RF ground and thermal dissipa-
tion. The amplifier provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal with
the amplifier occupying less than 0.023 sq. in. (14.6
sq. mm). All data is taken with the amplifier assem-
bled into a 50 ohm test fixture with the exposed base
paddle connected to RF ground.
Electrical Specifications, T_A = +25° C, Vdd= +3.6V
Parameter
Min.
Frequency Range
Gain
14
Gain Flatness
Input Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc)
8
40
5.0 - 5.5 Ghz
20
5.0 - 6.0 Ghz
18
21
33
Typ.
5.0 - 6.0
19
±1.0
12
44
23
22
24
38
13
480
Max.
23
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com