HMC278MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – 100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

MICROWAVE CORPORATION
HMC278MS8G
100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz
FEBRUARY 2001
V01.1200
Features
P1dB OUTPUT POWER: + 20 dBm
1
SINGLE SUPPLY: +3V to +5V
ULTRA SMALL 8 LEAD MSOP PACKAGE
IDEAL FOR PCS/3G, MMDS, HomeRF,
& BLUETOOTH
General Description
The HMC278MS8G is a 100mW GaAs MMIC
medium power amplifier covering 1.7 to 3 GHz.
The device is packaged in a low cost, surface
mount 8 lead MSOP plastic package with an
exposed base paddle for improved RF ground
and thermal dissipation. The self-biased ampli-
fier provides 21 dB of gain and +20 dBm P1dB
output power while operating from a single posi-
tive supply of Vdd= +5V @ 130 mA. At Vdd =
+3V the gain is 19 dB with a P1dB of +16dBm.
With RF I/Os matched to 50Ω, external compo-
nent requirements are minimal. At a height of
0.040” (1.0mm), the MSOP8 package is ideal for
low profile portable wireless devices. Use the
HMC278MS8G with the HMC309MS8 integrated
LNA/TxRx switch front-end for BLUETOOTH
Class I, HomeRF, 802.11 WLAN, and ISM 2.4
GHz radios.
Guaranteed Performance, As a Function of Vdd, -40 to +85 deg C
Parameter
Frequency Range
Gain
Gain Flatness ( Over Any 200 MHz BW)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression
(P 1d B)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Voltage (Vdd)
Supply Current (Idd)
Vdd= +5V
Min. Typ. Max.
1.7 - 3.0
15
20
25
± 0.7
5
10
6
10
46
52
14
19
16
21
26
32
6
4.75 5.0 5.25
130 165
Vdd= +5V
Min. Typ. Max.
2.3 - 2.5
16
21
25
± 0.5
7
10
7
10
48
52
17
20
19
22
29
32
6
4.75 5.0 5.25
130 165
Vdd= +3V
Min. Typ. Max.
2.3 - 2.5
15
19
23
± 0.5
7
10
7
10
48
52
13
16
15
18
28
32
6
2.75 3.0 3.25
125 140
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
Vdc
mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1 - 36
Fax: [phone]
Web Site: www.hittite.com