HMC261_02 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz

MICROWAVE CORPORATION
v01.0500
HMC261
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
Typical Applications
1
The HMC261 is ideal for:
• MMW Point-to-Point Radios
• LMDS
• VSAT
• SATCOM
Functional Diagram
Features
Stable Gain vs. Temperature: 14dB ± 1.5dB
High Reverse Isolation: 40 ~ 50 dB
P1dB Output Power: +12 dBm
Small Size: 1.3mm x 1.7mm
General Description
The HMC261 chip is a GaAs MMIC distributed
amplifier which covers the frequency range of 20
to 40 GHz. The chip can easily be integrated into
Multi-Chip Modules (MCMs) due to its small (2.21
mm²) size. The chip utilizes a GaAs PHEMT pro-
cess, operating from a single bias supply of + 3 to
+4V with a P1dB output power of +12 dBm. All data
is with the chip in a 50 ohm test fixture connected
via 0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31 mm (<12 mils). The HMC261 may be
used to drive the LOs of HMC mixers such as the
HMC203, HMC292, HMC294, or HMC329.
Electrical Specifications, T_A = +25° C, Vdd = +4V
Parameter
Min.
Typ.
Frequency Range
20 - 40
Gain
8
13
Input Return Loss
3
9
Output Return Loss
4
10
Reverse Isolation
32
45
Output Power for 1 dB Compression (P1dB)
8
12
Saturated Output Power (Psat)
11
13
Output Third Order Intercept (IP3)
20
23
Noise Figure
7.5
Supply Current (ldd)
75
Max.
18
13
90
Min.
11
6
7
40
9
11
20
Typ.
27 - 32
14
8
8
45
12
13
23
7
75
Max.
14
10
90
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
1-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]