HMC261LM1_01 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz

v03.1201
MICROWAVE CORPORATION
Typical Applications
1
The packaged HMC261LM1 amplifier enables
economical PCB SMT assembly for:
• Millimeterwave Point-to-Point Radios
• LMDS
• SATCOM
Functional Diagram
HMC261LM1
SMT DISTRIBUTED GaAs
MMIC AMPLIFIER, 20 - 32 GHz
Features
SMT mmWave Package
13 dB Gain
P1dB Output Power: +12 dBm
Single Positive Supply: +3V to +4V
No Gate Bias
General Description
The HMC261LM1 is a GaAs MMIC distributed ampli-
fier in a SMT leadless chip carrier package cover-
ing 20 to 32 GHz. The LM1 is a true surface mount
broadband millimeterwave package offering low loss
& excellent I/O match, preserving MMIC chip perfor-
mance. Utilizing a GaAs PHEMT process the device
offers 13 dB gain and +14 dBm saturated output
power from a bias supply of +4V @ 75 mA. As
an alternative to chip-and-wire hybrid assemblies
the HMC261LM1 eliminates the need for wire-
bonding, thereby providing a consistent connection
interface for the customer. All data is with the non-
hermetic, epoxy sealed LM1 packaged amplifier
device mounted in a 50 ohm test fixture. This part
replaces the HMC261CB1 by offering more band-
width and gain.
Electrical Specifications, T_A = +25° C, Vdd = +4V
Parameter
Min.
Typ.
Frequency Range
20 - 32
Gain
8
13
Input Return Loss
5
8
Output Return Loss
10
12
Reverse Isolation
35
Output Power for 1 dB Compression (P1dB)
8
12
Saturated Output Power (Psat)
10
14
Output Third Order Intercept (IP3)
16
21
Noise Figure
8.5
Supply Current (ldd)
75
Max.
17
12.5
90
Min.
10
6
10
8
11
17
Typ.
27 - 30
13
8
12
40
12
14
21
7
75
Max.
16
8.5
90
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
1-8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]