HMC261LM1 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz

MICROWAVE CORPORATION
HMC261LM1
SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz
FEBRUARY 2001
V01.0900
Features
SMT mmWAVE PACKAGE
1
13 dB GAIN
P1dB OUTPUT POWER: +12 dBm
SINGLE POSITIVE SUPPLY : +3V to +4V
NO GATE BIAS
General Description
The HMC261LM1 is a GaAs MMIC distributed
amplifier in a SMT leadless chip carrier package
covering 20 to 32 GHz. The LM1 is a true
surface mount broadband millimeterwave pack-
age offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 13 dB
gain and +14 dBm saturated output power from
a bias supply of +4V @ 75 mA. The packaged
amplifier enables economical PCB SMT assem-
bly for millimeterwave point-to-point radios,
LMDS, and SATCOM applications. As an alter-
native to chip-and-wire hybrid assemblies the
HMC261LM1 eliminates the need for
wirebonding, thereby providing a consistent
connection interface for the customer. All data is
with the non-hermetic, epoxy sealed LM1 pack-
aged LNA device mounted in a 50 ohm test
fixture. This part replaces the HMC261CB1 by
offering more bandwidth and gain.
Guaranteed Performance, Vdd = +4V, -55 to +85 deg C
Parameter
Min.
Typ. Max. Min. Typ.
Frequency Range
20 - 32
27 - 30
Gain
8
13
17
10
13
Input Return Loss
5
8
6
8
Output Return Loss
10
12
10
12
Reverse Isolation
35
40
Output Power for 1dB Compression (P1dBo)
8
12
8
12
Saturated Output Power (Psat)
10
14
11
14
Output Third Order Intercept (IP3)
16
21
17
21
Noise Figure
8.5
12.5
7
Supply Voltage (Vdd)
2.75
4.0
4.25 2.75 4.0
Supply Current (Idd) (Vdd = 4.0 Vdc)
75
90
75
Max.
16
8.5
4.25
90
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
Vdc
mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1-8
Fax: [phone]
Web Site: www.hittite.com