HMC234C8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz

MICROWAVE CORPORATION
v02.1203
HMC234C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Typical Applications
The HMC234C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Features
Isolation: 52 dB @ 2.0 GHz
40 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Reflective Design
Surface Mount Ceramic Package
Functional Diagram
14
General Description
The HMC234C8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a
non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >52
dB isolation up to 2 GHz and >38 dB isolation
up to 8.0 GHz. The switch operates using
complementary negative control voltage logic
lines of -5/0V and requires no bias supply. This
product is an excellent pin-for-pin replacement to
the SMDI SSW124.
Electrical Specifications, T_A = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Isolation
Return Loss
“On State”
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
DC - 8.0 GHz
Min.
Typ.
Max.
1.4
1.7
1.6
1.9
2.1
2.4
47
52
35
40
33
38
15
12
14
9
6
22
26
40
46
3
5
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
14 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com