HMC233G8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6.0 GHz

MICROWAVE CORPORATION
v00.0504
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
Typical Applications
The HMC233G8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Space Systems
• Test Instrumentation
Functional Diagram
14
Features
Isolation: 44 dB @ 2.0 GHz
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Reflective Design
Hermetic Surface Mount Package
General Description
The HMC233G8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a
hermetic surface mount package. Covering DC to
6.0 GHz, the switch features >44 dB isolation up
to 2 GHz and >31 dB isolation up to 6.0 GHz. The
switch operates using complementary negative
control voltage logic lines of -5/0V and requires
no bias supply.
Electrical Specifications, T_A = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
1.3
1.6
1.5
1.8
1.8
2.2
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
39
44
30
35
26
31
Return Loss
“On State”
DC - 5.0 GHz
DC - 6.0 GHz
17
14
Return Loss RF1, RF2
“Off State”
DC - 4.0 GHz
DC - 6.0 GHz
12
8
Input Power for 1 dB Compression
0.5 - 6.0 GHz
22
27
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 6.0 GHz
46
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
3
6
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
14 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com