HMC232C8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz

MICROWAVE CORPORATION
v02.1203
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Typical Applications
The HMC232C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Functional Diagram
14
Features
Isolation: 55 dB @ 2.0 GHz
43 dB @ 6.0 GHz
Insertion Loss: 1.6 dB Typical @ 6.0 GHz
Non-Reflective Design
Surface Mount Ceramic Package
Direct Replacement for HMC132C8
General Description
The HMC232C8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in a
non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >55
dB isolation up to 2 GHz and >42 dB isolation
up to 8.0 GHz. The switch operates using
complementary negative control voltage logic
lines of -5/0V and requires no bias supply. This
product is a form, fit & functional replacement for
the HMC132C8.
Electrical Specifications, T_A = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Isolation
Return Loss
“On State”
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
DC - 8.0 GHz
Min.
Typ.
Max.
1.2
1.5
1.6
2.0
2.2
2.8
50
55
38
43
37
42
19
12
10
13
8
7
22
26
40
46
3
5
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
14 - 88
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com