HMC216MS8_06 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz

HMC216MS8 / 216MS8E
v02.0705
GaAs MMIC SMT DOUBLE-BALANCED FET
MIXER, 1.3 - 2.5 GHz
Typical Applications
The HMC216MS8 / HMC216MS8E is ideal for:
• Base Stations
7
• WirelessLAN
• PCMCIA
• Portable Wireless
Features
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
Functional Diagram
General Description
The HMC216MS8 & HMC216MS8E are ultra min-
iature double-balanced FET mixers in 8 lead plastic
surface mount packages (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel planar
transformer baluns on the chip. In addition to an LO
drive of +3 to +13 dBm, a gate voltage of Vgg = -0.9
to -1.6 Vdc is required. The device can be used as an
upconverter or downconverter for 1900 or 2400 MHz
applications. The consistent MMIC performance will
improve system operation and assure regulatory com-
pliance.
Electrical Specifications, T_A = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
LO = +11 dBm
Min.
Typ.
Max.
1.3 - 2.5
DC - 0.65
9
10.5
9
10.5
27
30
17
20
LO = +7 dBm
Min.
Typ.
Max.
1.6 - 2.3
DC - 0.5
8.5
10
8.5
10
27
32
17
20
LO = +3 dBm
Min.
Typ.
Max.
1.7 - 2.0
DC - 0.4
9
10.5
9
10.5
27
32
17
20
IP3 (Input)
21
25
14
18
8
12
1 dB Gain Compression (Input)
8
11
5
10
3
8
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
7 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com