HMC216MS8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz

v01.0801
HMC216MS8
MICROWAVE CORPORATION
GaAs MMIC SMT DOUBLE-BALANCED
FET MIXER, 1.3 - 2.5 GHz
Typical Applications
The HMC216MS8 is ideal for:
• Base Stations
• WirelessLAN
• PCMCIA
• Portable Wireless
Features
IP3 (Input): +25 dBm @ +11 dBm LO
LO Range = +3 to +11 dBm
Conversion Loss: 8.5 dB
LO / RF Isolation: 32 dB
12
Functional Diagram
General Description
The HMC216MS8 is an ultra miniature double-
balanced FET mixer in an 8 lead plastic surface
mount package (MSOP). This MMIC mixer is
constructed of switched GaAs FETs and novel
planar transformer baluns on the chip. In addition
to an LO drive of +3 to +13 dBm, a gate voltage of
Vgg = -0.9 to -1.6 Vdc is required. The device can
be used as an upconverter or downconverter for
1900 or 2400 MHz applications. The consistent
MMIC performance will improve system opera-
tion and assure regulatory compliance.
Electrical Specifications, T_A = +25° C, As a Function of LO Drive, Vgg = -1.2 Vdc
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
1 dB Gain Compression (Input)
LO = +11 dBm
Min.
Typ.
Max.
1.3 - 2.5
DC - 0.65
9
10.5
9
10.5
27
30
17
20
21
25
8
11
LO = +7 dBm
Min.
Typ.
Max.
1.6 - 2.3
DC - 0.5
8.5
10
8.5
10
27
32
17
20
14
18
5
10
LO = +3 dBm
Min.
Typ.
Max.
1.7 - 2.0
DC - 0.4
9
10.5
9
10.5
27
32
17
20
8
12
3
8
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
12 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com