HMC199MS8_06 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – DUAL SPDT SWITCH DC - 2.5 GHz

v04.0404
Typical Applications
The HMC199MS8 / 199MS8E is ideal for:
• Cellular
• ISM Basestations
• PCS
8
Functional Diagram
HMC199MS8 / 199MS8E
DUAL SPDT SWITCH
DC - 2.5 GHz
Features
RoHS-Compliant Product
Integrated Dual SPDTs
Low Insertion Loss: <0.5 dB @ 2.0 GHz
Positive Control: 0/+5V
Ultra Small MSOP8 Package: 14.8 mm²
General Description
The HMC199MS8 & HMC199MS8E are low-cost
general purpose dual SPDT GaAs “bypass” switches
in 8-lead MSOP packages covering DC to 2.5 GHz.
These four-RF- port components integrate two SPDT
switches and a through line onto a single IC. The
designs provide low insertion loss of less than 0.5
dB while switching passive or active external cir-
cuit components in and out of the signal path. Port
to port isolations are typically 25 to 30 dB. On-chip
circuitry enables positive voltage control operation at
very low DC currents with control inputs compatible
with CMOS and most TTL logic families. Applications
include LNA or filter bypass switching and single bit
attenuator switching. The HMC199MS8E is a RoHS-
compliant product.
Electrical Specifications, T_A = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
0.3
DC - 2.0 GHz
0.5
DC - 2.5 GHz
0.7
Isolation
DC - 2.0 GHz
DC - 2.5 GHz
22
25
17
21
Return Loss (On State, Any Port)
DC - 2.0 GHz
DC - 2.5 GHz
17
20
12
15
Input Power for 1 dB Compression
0.5 - 2.0 GHz
19
23
Input Third Order Intercept
(Two-tone Input Power = 0 dBm Each Tone)
0.5 - 2.0 GHz
32
36
Switching Characteristics
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
20
tON, tOFF (50% CTL to 10/90% RF)
40
Max.
0.6
0.8
1.0
Units
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
8 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com