HMC-XTB110_10 Datasheet, PDF (1/4 Pages) Hittite Microwave Corporation – GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT

v00.1008
Typical Applications
2
This HMC-XTB110 is ideal for:
• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
HMC-XTB110
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Features
Conversion Loss: 19 dB
Input Drive: +13 dBm
Passive: No DC Bias Required
Die Size: 1.1 x 1.4 x 0.1 mm
Functional Diagram
General Description
The HMC-XTB110 is a monolithic X3 Passive
Frequency Multiplier which utilizes GaAs Shottky
Diode technology, and exhibits low conversion loss
and high Fo isolation. This wideband X3 multiplier
requires no DC power, and is targeted to high volume
applications where frequency X3 of a lower frequency
is more economical than directly generating a higher
frequency. All bond pads and the die backside are
Ti/Au metallized and the Shottky diode devices are
fullypassivatedforreliableoperation. TheHMC-XTB110
Passive X3 MMIC is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making
it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
Electrical Specifications*, T_A = 25 °C, Pin = +13 dBm
Parameter
Min.
Frequency Range Input
Frequency Range Output
Conversion Loss
*Unless otherwise indicated, all measurements are from probed die
Typ.
24 - 30
72 - 90
19
Max.
Units
GHz
GHz
dB
2-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]