HMC-XDB112 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT

v00.0907
Typical Applications
This HMC-XDB112 is ideal for:
2
• Point-to-Point Radios
• VSAT
• Test Instrumentation
• Military & Space
• Clock Generation
HMC-XDB112
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Features
Conversion Loss: 13 dB
Passive: No DC Bias Required
Input Drive: +13 dBm
High Fo Isolation: 30 dB
Die Size: 2.2 x 0.65 x 0.1 mm
Functional Diagram
General Description
The HMC-XDB112 is a monolithic Passive Frequency
Doubler which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) technology, and is targeted to high
volume applications where frequency doubling of a
lower frequency is more economical than directly
generating a higher frequency. All bond pads and
the die backside are Ti/Au metallized and the HBT
devices are fully passivated for reliable operation. The
HMC-XDB112 Passive Doubler MMIC is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications*, T_A = 25 °C, Pin = +13 dBm
Parameter
Min.
Frequency Range Input
Frequency Range Output
Conversion Loss
Fo Isolation with respect to output
*Unless otherwise indicated, all measurements are from probed die
Typ.
10 - 15
20 - 30
13
30
Max.
Units
GHz
GHz
dB
dB
2 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com