HMC-SDD112 Datasheet, PDF (1/3 Pages) Hittite Microwave Corporation – GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz

v00.0907
Typical Applications
This HMC-SDD112 is ideal for:
• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
• SATCOM
• Sensors
Functional Diagram
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
Features
Low Insertion Loss: 2 dB
High Isolation: 30 dB
DC Blocked RF I/Os
Integrated DC Bias Circuitry
Die Size: 2.01 x 0.975 x 0.1 mm
General Description
The HMC-SDD112 is a monolithic, GaAs PIN diode
based Single Pole Double Throw (SPDT) MMIC
Switch which exhibits low insertion loss and high
isolation. This all-shunt MMIC SPDT features
on-chip DC blocks and DC bias voltage decoupling
circuitry. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. The HMC-SDD112
GaAs PIN SPDT is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications*, T_A = +25 °C, with -5/+5V Control, 50 Ohm System
Parameter
Min.
Typ.
Max.
Frequency Range
55 - 86
Insertion Loss
2
3
Isolation
25
30
Return Loss ON State
12
Current (+5 V) ON State
22
Current (-5 V) OFF State
-63
* Unless otherwise indicated, all measurements are from probed die
Units
GHz
dB
dB
dB
mA
nA
0-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com