HMC-MDB172_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC I/Q MIXER 19 - 33 GHz

v02.0209
Typical Applications
This HMC-MDB172 is ideal for:
• Point-to-Point Radios
3
• VSAT
• Military Radar, ECM & EW
• Test & Measurement Equipment
• SATCOM
HMC-MDB172
GaAs MMIC I/Q MIXER
19 - 33 GHz
Features
Wide IF Bandwidth: DC - 5 GHz
High Image Rejection: 25 dB
High LO to RF Isolation: 35 dB
Passive: No DC Bias Required
Die Size: 2.2 x 2.0 x 0.1 mm
Functional Diagram
General Description
The HMC-MDB172 is a monolithic I/Q Mixer which
can be used as either an image reject mixer (IRM) or
a single sideband upconverter. This passive MMIC
is fabricated with GaAs Heterojunction Bipolar
Transistor (HBT) Shottky diode technology. For
downconversion applications, an external quadrature
hybrid can be used to select the desired sideband
while rejecting image signals. All bond pads and the
die backside are Ti/Au metallized and the Shottky
devices are fully passivated for reliable operation.
The HMC-MDB172 I/Q MMIC Mixer is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications,* T_A = 25 °C, IF = 3 GHz, LO = +16 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
19 - 33
Frequency Range, IF
DC - 5
Conversion Loss with External Hybrid
8
Image Rejection
20
25
1 dB Compression (Input)
8
LO to RF Isolation
30
35
LO to IF Isolation
18
23
RF to IF Isolation
19
25
IP3 (Input)
17
*Unless otherwise indicated, all measurements are from probed die
Max.
11
Units
GHz
GHz
dB
dB
dBm
dB
dB
dB
dBm
3 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com