HMC-MDB171 Datasheet, PDF (1/4 Pages) Hittite Microwave Corporation – GaAs MMIC I/Q MIXER 35 - 45 GHz

v00.0907
Typical Applications
This HMC-MDB171 is ideal for:
• Point-to-Point Radios
• Military Radar, ECM & EW
• Test & Measurement Equipment
• SATCOM
• Sensors
HMC-MDB171
GaAs MMIC I/Q MIXER
35 - 45 GHz
Features
Wide IF Bandwidth: DC - 5 GHz
High Image Rejection: 25 dB
High LO to RF Isolation
Passive: No DC Bias Required
Die Size: 1.5 x 2.0 x 0.1 mm
Functional Diagram
General Description
The HMC-MDB171 is a monolithic I/Q Mixer which can
be used as either an image reject mixer (IRM) or a single
sideband upconverter. This passive MMIC mixer is
fabricated with GaAs Heterojunction Bipolar Transistor
(HBT) Shottky diode technology. For downconversion
applications, an external quadrature hybrid can be
used to select the desired sideband while rejecting
image signals. All bond pads and the die backside
are Ti/Au metallized and the Shottky devices are fully
passivated for reliable operation. The HMC-MDB171
I/Q MMIC Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
X-8
Electrical Specifications,* T_A = 25 °C, IF = 3 GHz, LO = +16 dBm
Parameter
Min.
Typ.
Frequency Range, RF & LO
35 - 45
Frequency Range, IF
DC - 5
Conversion Loss with External Hybrid
8
Conversion Loss with out External Hybrid
12.5
1 dB Compression (Input)
8
Image Rejection
20
25
LO to RF Isolation
30
35
LO to IF Isolation
15
20
RF to IF Isolation
20
25
IP3 (Input)
17
*Unless otherwise indicated, all measurements are from probed die
Max.
11
Units
GHz
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com