HMC-MDB169_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC FUNDAMENTAL MIXER, 54 - 64 GHz

v01.0209
Typical Applications
This HMC-MDB169 is ideal for:
• Short Haul / High Capacity Radios
• Point-to-Multi-Point Equipment
• Military Radar, ECM & EW
• SATCOM
4
HMC-MDB169
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Features
Passive Double Balanced Topology
High LO to RF Isolation: 30 dB
Low Conversion Loss: 8 dB
Wide IF Bandwidth: DC - 5 GHz
Die Size: 0.9 x 1.0 x 0.1 mm
Functional Diagram
General Description
The HMC-MDB169 is a passive Double Balanced
MMIC Mixer which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) Shottky diode technology and can
be used as either an upconverter or a downconverter.
This compact mixer features wide IF bandwidth,
low conversion loss and high LO to RF and LO to IF
isolation. All bond pads and the die backside are Ti/Au
metallized and the Shottky devices are fully passivated
for reliable operation. The HMC-MDB169 Double
Balanced Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. This compact MMIC
is a much smaller and more consistent alternative to
hybrid style double balanced mixer assemblies. All
data shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes.
Electrical Specifications,^[1] T_A = 25 °C, IF = 2 GHz, LO = +13 dBm
Parameter
Min.
Typ.
Max.
Frequency Range, RF & LO
54 - 64
Frequency Range, IF
DC - 5
Conversion Loss
8
11
LO to RF Isolation
30
LO to IF Isolation
25
RF to IF Isolation
25
IP3 (Input)
13
1 dB Compression (Input)
4
[1] Unless otherwise indicated, all measurements are from probed die
Units
GHz
GHz
dB
dB
dB
dB
dBm
dBm
4 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com