HMC-AUH320 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz

v03.0209
HMC-AUH320
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Typical Applications
This HMC-AUH320 is ideal for:
• Short Haul / High Capacity Links
3
• Wireless LAN Bridges
• Automotive Radar
• Military & Space
• E-Band Communication Systems
Features
Gain: 16 dB @ 74 GHz
P1dB: +15 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.20 x 0.87 x 0.1 mm
Functional Diagram
General Description
The HMC-AUH320 is a high dynamic range, four stage
GaAs HEMT MMIC Medium Power Amplifier which
operates between 71 and 86 GHz. The HMC-AUH320
provides 16 dB of gain at 74 GHz, and an output
power of +15 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-AUH320
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
71 - 86
Gain
10
16
Input Return Loss
4
Output Return Loss
6
Output power for 1dB Compression (P1dB)
15
Saturated Output Power (Psat)
16
Supply Current (Idd1+Idd2)
130
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd₁ = 40 mA, Idd₂ = 90 mA
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 238
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com