HMC-AUH317_11 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz

v04.0511
Typical Applications
This HMC-AUH317 is ideal for:
• Short Haul / High Capacity Links
3
• Wireless LAN Bridges
• Military & Space
• E-Band Communication Systems
HMC-AUH317
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 - 86 GHz
Features
Gain: 22 dB
P1dB: +17.5 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.65 x 1.6 x 0.05 mm
Functional Diagram
General Description
The HMC-AUH317 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 81 and 86 GHz. The HMC-
AUH317 provides 22 dB of gain, and an output power
of +17.5 dBm at 1 dB compression from a +4V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-AUH317 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications, T_A = +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA ^[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
81 - 86
GHz
Gain
19
22
dB
Input Return Loss
9
dB
Output Return Loss
5
dB
Output power for 1dB Compression (P1dB)
17.5
dBm
Saturated Output Power (Psat)
19.5
dBm
Supply Current (Idd1+Idd2)
160
mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
3-1
Products and product information are subject to change without notice.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]