HMC-APH633 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz

v03.0209
Typical Applications
This HMC-APH633 is ideal for:
• Short Haul / High Capacity Links
3
• Wireless LAN Bridges
• Military & Space
• E-Band Communication Systems
HMC-APH633
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Features
Gain: 13 dB
P1dB: +20 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.47 x 1.60 x 0.05 mm
Functional Diagram
General Description
The HMC-APH633 is a two stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
71 and 76 GHz. The HMC-APH633 provides 13 dB
of gain, and an output power of +20 dBm at 1 dB
compression from a +4V supply voltage. All bond
pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH633 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF
probes.
Electrical Specifications, T_A = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
71-76
Gain
9
13
Input Return Loss
8
Output Return Loss
10
Output power for 1dB Compression (P1dB)
20
Supply Current (Idd1+Idd2)
240
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd_total = 240 mA
Units
GHz
dB
dB
dB
dBm
mA
3 - 220
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com