HMC-APH596 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 16 - 33 GHz

v02.0208
Typical Applications
This HMC-APH596 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC-APH596
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 16 - 33 GHz
Features
Output IP3: +33 dBm
P1dB: +24 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.55 x 1.87 x 0.1 mm
Functional Diagram
General Description
The HMC-APH596 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 16 and 33 GHz. The HMC-APH596 provides
17 dB of gain, and an output power of +24 dBm at
1 dB compression from a +5V supply voltage. All
bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH596 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wirebonding, making it ideal
for MCM and hybrid microcircuit applications. All
data Shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 400 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
16 - 33
Gain
16
17
Input Return Loss
17
Output Return Loss
18
Output power for 1dB Compression (P1dB)
24
Output Third Order Intercept (IP3)
33
Supply Current (Idd1+Idd2)
400
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd_total = 400 mA
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com