HMC-APH518 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz

v02.0208
Typical Applications
This HMC-APH518 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC-APH518
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 21 - 24 GHz
Features
Output IP3: +39 dBm
P1dB: +30.5 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm
General Description
The HMC-APH518 is a two stage GaAs HEMT MMIC
1 Watt Power Amplifier which operates between
21 and 24 GHz. The HMC-APH518 provides 17 dB
of gain, and an output power of +30.5 dBm at 1 dB
compression from a +5V supply voltage. All bond
pads and the die backside are Ti/Au metallized and
the amplifier device is fully passivated for reliable
operation. The HMC-APH518 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications^[1], T_A = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
21 - 24
Gain
16
17
Input Return Loss
15
Output Return Loss
8
Output power for 1dB Compression (P1dB)
28
30.5
Output Third Order Intercept (IP3)
37
39
Supply Current (Idd1+Idd2)
950
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 202
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com