HMC-APH478 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz

v02.0208
Typical Applications
This HMC-APH478 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
HMC-APH478
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 18 - 20 GHz
Features
Output IP3: +38.5 dBm
P1dB: +30 dBm
Gain: 17.5 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.92 x 1.28 x 0.1 mm
General Description
The HMC-APH478 is a two stage GaAs HEMT MMIC
1 Watt Power Amplifier which operates between 18
and 20 GHz. The HMC-APH478 provides 17.5 dB
of gain, and an output power of +30 dBm at 1 dB
compression from a +5V supply voltage. All bond
pads and the die backside are Ti/Au metallized and
the amplifier device is fully passivated for reliable
operation. The HMC-APH478 GaAs HEMT MMIC
1 Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
18 - 20
Gain
16
17.5
Input Return Loss
8
Output Return Loss
5
Output power for 1dB Compression (P1dB)
28.5
30
Output Third Order Intercept (IP3)
38.5
Supply Current (Idd1+Idd2)
900
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 300 mA, Idd2 = 600 mA
Units
GHz
dB
dB
dB
dBm
dBm
mA
3 - 190
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com