HMC-APH473 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz

v03.0209
HMC-APH473
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 37 - 40 GHz
Typical Applications
This HMC-APH473 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Features
Output IP3: +37 dBm
P1dB: +28 dBm
Gain: 15 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.59 x 1.26 x 0.1 mm
Functional Diagram
General Description
The HMC-APH473 is a two stage GaAs HEMT
MMIC 0.6 Watt Power Amplifier which operates
between 37 and 40 GHz. The HMC-APH473
provides 15 dB of gain, and an output power of
+28 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH473 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications ,^[1] T_A = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 1080 mA ^[2]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
37 - 40
GHz
Gain
11
15
dB
Input Return Loss
10
dB
Output Return Loss
14
dB
Output power for 1dB Compression (P1dB)
28
dBm
Output Third Order Intercept (IP3)
37
dBm
Supply Current (Idd1+Idd2)
1080
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd_total = 1080 mA
3 - 184
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com