HMC-APH462 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 15 - 27 GHz

v02.0208
Typical Applications
This HMC-APH462 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
HMC-APH462
GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 15 - 27 GHz
Features
Output IP3: +37 dBm
P1dB: +29 dBm
Gain: 17 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 3.70 x 2.62 x 0.1 mm
Functional Diagram
General Description
The HMC-APH462 is a high dynamic range, two stage
GaAs HEMT MMIC 0.8 Watt Power Amplifier which
operates between 15 and 27 GHz. The HMC-APH462
provides 17 dB of gain, and an output power of +29
dBm at 1 dB compression from a +5V supply voltage.
All bond pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH462 GaAs HEMT MMIC 1
Watt Power Amplifier is compatible with conventional
die attach methods, as well as thermocompression
and thermosonic wire bonding, making it ideal for
MCM and hybrid microcircuit applications. All data
Shown herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications^[1]
T_A = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 1440 mA ^[2]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
15 - 17
17 - 27
GHz
Gain
12
16
13
17
dB
Input Return Loss
15
18
dB
Output Return Loss
15
18
dB
Output power for 1dB Compression (P1dB)
26
27
29
dBm
Output Third Order Intercept (IP3)
34
37
Supply Current (Idd1+Idd2 + Idd3 + Idd4)
1440
1440
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3=Vgg4 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 + Idd4 = 480 mA, Idd2 + Idd3 = 960 mA
3 - 176
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com