HMC-APH196 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz

v02.0209
Typical Applications
This HMC-APH196 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC-APH196
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 - 30 GHz
Features
Output IP3: +31 dBm
P1dB: +22 dBm
Gain: 20 dB @ 20 GHz
Supply Voltage: +4.5V
50 Ohm Matched Input/Output
Die Size: 3.3 x 1.95 x 0.1 mm
General Description
The HMC-APH196 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 17 and 30 GHz. The HMC-APH196
provides 20 dB of gain at 20 GHz, and an output
power of +22 dBm at 1 dB compression from a +4.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-APH196
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data Shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA ^[2]
Parameter
Min
Typ
Max Min
Typ Max Min
Typ Max
Frequency Range
17 - 24
24 - 27
27 - 30
Gain
15
20
14
17
11
16
Input Return Loss
17
17
17
Output Return Loss
25
23
23
Output Power for 1 dB Compression (P1dB)
20
22
20
22
20
22
Output Third Order Intercept (IP3)
31
31
31
Supply Current (Idd1 + Idd2)
400
400
400
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V) to achieve Idd_total = 400 mA
Units
GHz
dB
dB
dB
dBm
dBm
dBm
3 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com