HMC-ALH509_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

v03.0209
1
Typical Applications
This HMC-ALH509 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Automotive Radar
• Military & Space
• E-Band Communication Systems
Functional Diagram
HMC-ALH509
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Features
Noise Figure: 5 dB
P1dB: +7 dBm
Gain: 14 dB
Supply Voltage: +2V
50 Ohm Matched Input/Output
Die Size: 3.20 x 1.60 x 0.1 mm
General Description
The HMC-ALH509 is a three stage GaAs HEMT
MMIC Low Noise Amplifier (LNA) which operates
between 71 and 86 GHz. The HMC-ALH509 features
14 dB of small signal gain, 5 dB of noise figure and
an output power of +7 dBm at 1dB compression
from a +2V supply voltage. All bond pads and the
die backside are Ti/Au metallized and the amplifier
device is fully passivated for reliable operation. This
versatile LNA is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm
environment and contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd = 2V*
Parameter
Min.
Frequency Range
Gain
12
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Supply Current (Idd)(Vdd=2V, Vgg= -0.2V Typ.)
*Unless otherwise indicated, all measurements are from probed die
Typ.
71 - 86
14
5
14
10
7
50
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 216
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com