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HMC-ALH482 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz
v04.1009
1
Typical Applications
This HMC-ALH482 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC-ALH482
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 22 GHz
Features
Noise Figure: 1.7 dB @ 2-12 GHz
Noise Figure: 2.2 dB @ 12-22 GHz
Gain: 16 dB @ 12 GHz
P1dB Output Power: +14 dBm
Supply Voltage: +4V @ 45 mA
Die Size: 2.04 x 1.2 x 0.1 mm
General Description
The HMC-ALH482 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 2
and 22 GHz. The amplifier provides 16 dB of gain, 1.7
dB noise figure up to 12 GHz and +14 dBm of output
power at 1 dB gain compression while requiring only
45 mA from a +4V supply voltage. The HMC-ALH482
amplifier is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
Electrical Specifications*, TA = +25° C, Vdd= +4V
Parameter
Min.
Typ.
Frequency Range
2 - 12
Gain
15
16
Gain Variation over Temperature
0.01
Noise Figure
1.7
Input Return Loss
8
Output Return Loss
10
Output Power for 1 dB Compression
14
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)
45
*Unless otherwise indicated, all measurements are from probed die
Max.
2.5
Min.
Typ.
Max.
Units
12 - 22
GHz
15
16
dB
0.01
dB / °C
2.2
3
dB
6
dB
5
dB
14
dBm
45
mA
1 - 204
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com