HMC-ALH459 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

v01.1207
1
Typical Applications
This HMC-ALH459 is ideal for:
• Short Haul / High Capacity Links
• Wireless LANs
• Automotive Radar
• Military & Space
• E-Band Communication Systems
HMC-ALH459
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Features
Noise Figure: <5 dB
P1dB: +7 dBm
Gain: 14 dB
Supply Voltage: +2.4V
50 Ohm Matched Input/Output
Die Size: 3.10 x 1.60 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH459 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
71 and 86 GHz. The HMC-ALH459 features 14 dB of
small signal gain, 4.5 dB of noise fi gure and an output
power of +7 dBm at 1dB compression from two supply
voltages at 2.1V and 2.4V respectively. All bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications ^[1], T_A = +25° C
Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA ^[2]
Parameter
Min.
Frequency Range
Gain
13
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Supply Current (Idd1+Idd2+Idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Idd_total = 30 mA
Typ.
71 - 86
14
4.5
8
10
7
30
Max.
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 200
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com