HMC-ALH445_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

v03.0410
1
Typical Applications
This HMC-ALH445 is ideal for:
• Wideband Communication Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC-ALH445
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 18 - 40 GHz
Features
Noise Figure: 3.9 dB @ 28 GHz
Gain: 9 dB
P1dB Output Power: +12 dBm @ 28 GHz
Supply Voltage: +5V @ 45 mA
Die Size: 1.6 x 1.6 x 0.1 mm
General Description
The HMC-ALH445 is a GaAs MMIC HEMT self-biased,
wideband Low Noise Amplifier die which operates
between 18 and 40 GHz. The amplifier provides
9 dB of gain, 3.9 dB noise figure at 28 GHz and
+12 dBm of output power at 1 dB gain compression
while requiring only 45 mA from a single +5V supply.
The HMC-ALH445 amplifier is ideal for integration into
Multi-Chip-Modules (MCMs) due to its small size.
Electrical Specifications*, T_A = +25° C, Vdd= +5V
Parameter
Min.
Frequency Range
Gain
8
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current (Idd) (Vdd = 5V)
*Unless otherwise indicated, all measurements are from probed die
Typ.
18 - 28
9
4
10
15
12
45
Max.
5
Min.
Typ.
Max.
28 - 40
8
10
3.9
4.5
10
15
13
45
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 192
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]