HMC-ALH444_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz

v03.0410
1
Typical Applications
This HMC-ALH444 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
* VSAT
Functional Diagram
HMC-ALH444
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 12 GHz
Features
Noise Figure: 1.75 dB @ 10 GHz
Gain: 17 dB
P1dB Output Power: +19 dBm @ 5 GHz
Supply Voltage: +5V @ 55 mA
Die Size: 2.64 x 1.64 x 0.1 mm
General Description
The HMC-ALH444 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 1
and 12 GHz. The amplifier provides 17 dB of gain, 1.5
dB noise figure and +19 dBm of output power at 1 dB
gain compression while requiring only 55 mA from a
+5V supply voltage.
Electrical Specifications*, T_A = +25° C, Vdd= +5V
Parameter
Min.
Frequency Range
Gain
15
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output IP3
Output Power for 1 dB Compression
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
*Unless otherwise indicated, all measurements are from probed die
Typ.
1 - 12
17
0.02
1.5
10
14
28
19
55
Max.
2
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
1 - 186
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]