HMC-ALH435 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz

v03.1009
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Typical Applications
This HMC-ALH435 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
• VSAT
Functional Diagram
HMC-ALH435
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 5 - 20 GHz
Features
Noise Figure: 2.2 dB @ 12 GHz
Gain: 13 dB @ 14 GHz
P1dB Output Power: +16 dBm @ 12 GHz
Supply Voltage: +5V @ 30 mA
Die Size: 1.48 x 0.9 x 0.1 mm
General Description
The HMC-ALH435 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 5
and 20 GHz. The amplifier provides 13 dB of gain,
2.2 dB noise figure at 12 GHz and +16 dBm of output
power at 1 dB gain compression while requiring only
30 mA from a +5V supply voltage. The HMC-ALH435
amplifier is ideal for integration into Multi-Chip-
Modules (MCMs) due to its small size.
Electrical Specifications, T_A = +25° C, Vdd= +5V
Parameter
Min.
Frequency Range
Gain
10
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output IP3
Output Power for 1 dB Compression
Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ)
*Unless otherwise indicated, all measurements are from probed die
Typ.
5 - 20
13
0.02
2.2
5
10
25
16
30
Max.
2.6
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
1 - 180
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com