HMC-ALH376_1 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 35 - 45 GHz

v01.1207
1
Typical Applications
This HMC-ALH376 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military & Space
Functional Diagram
HMC-ALH376
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
Features
Noise Figure: 2 dB
Gain: 16 dB @ 40 GHz
P1dB Output Power: +6 dBm
Supply Voltage: +4V @ 87 mA
Die Size: 2.7 x 1.44 x 0.1 mm
General Description
The HMC-ALH376 is a GaAs MMIC HEMT three
stages, self-biased Low Noise Amplifier die
which operates between 35 and 45 GHz. The
amplifier provides 16 dB of gain, a 2 dB noise
figure and +6 dBm of output power at 1 dB gain
compression while requiring only 87 mA from a single
+4V supply. This self-biased LNA is ideal for integ-
ration into hybrid assemblies or Multi-Chip-Modules
(MCMs) due to its small size (3.9 mm2).
Electrical Specifications*, T_A = +25° C, Vdd= +4V
Parameter
Min.
Typ.
Frequency Range
35 - 40
Gain
15
16
Noise Figure
2
Input Return Loss
10
Output Return Loss
16
Output Power for 1 dB Compression
6
Supply Current (Idd) (Vdd= +4V)
87
*Unless otherwise indicated, all measurements are from probed die
Max.
3
Min.
Typ.
Max.
40 - 45
10
12
2.2
3
17
18
6
87
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com