HMC-ALH369 Datasheet, PDF (1/3 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz

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Typical Applications
This HMC-ALH369 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Phased Arrays
• VSAT
• SATCOM
Functional Diagram
HMC-ALH369
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Features
Excellent Noise Figure: 2.0 dB
Gain: 22 dB
P1dB Output Power: +11 dBm
Supply Voltage: +5V @ 66 mA
Die Size: 2.10 x 1.37 x 0.1 mm
General Description
The HMC-ALH369 is a GaAs MMIC HEMT three stage,
self-biased Low Noise Amplifier die which operates
between 24 and 40 GHz. The amplifier provides 22 dB
of gain, from a single bias supply of +5V @ 66 mA with
a noise figure of 2 dB. The HMC-ALH369 amplifier die
is ideal for integration into Multi-Chip-Modules (MCMs)
due to its small size (2.88 mm2).
Electrical Specifications ,^[1] T_A = +25° C, Vdd= +5V, Idd = 66mA
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
24 - 32
Gain
20
22
15
Noise Figure
2
2.5
Input Return Loss
12
Output Return Loss
12
Output Power for 1 dB Compression
9
11
9
Supply Current (Idd)
66
[1] Unless otherwise indicated, all measurements are from probed die
Typ.
32 - 40
17
2.1
8
12
11
66
Max.
2.5
Units
GHz
dB
dB
dB
dB
dBm
mA
0 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com