HMC-ALH313 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz

v01.1207
1
Typical Applications
This HMC-ALH313 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Test Equipment & Sensors
• Military & Space
Functional Diagram
HMC-ALH313
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 27 - 33 GHz
Features
Noise Figure: 3 dB
Gain: 20 dB
P1dB Output Power: +12 dBm
Supply Voltage: +2.5V @ 52 mA
Die Size: 1.80 x 0.73 x 0.1 mm
General Description
The HMC-ALH313 is a three stage GaAs MMIC
HEMT Low Noise Amplifier die which operates bet-
ween 27 and 33 GHz. The amplifier provides 20 dB
of gain, a 3 dB noise figure and +12 dBm of output
power at 1 dB gain compression while requiring only
52 mA from a +2.5V supply voltage. This amplifier die
is ideal for use as a LNA or driver amplifier, and may
be easily integrated into Multi-Chip-Modules (MCMs)
due to its small size (1.30 mm2) .
Electrical Specifications ,^[1] T_A = +25° C, Vdd= 2.5V, Idd = 52mA ^[2]
Parameter
Min.
Typ.
Frequency Range
27 - 33
Gain
18
20
Gain Variation over Temperature
0.03
Noise Figure
3
Input Return Loss
12
Output Return Loss
14
Output Power for 1 dB Compression
10
12
Supply Current
52
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd_total = 52 mA
Max.
3.5
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
mA
1 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com