HMC-ALH310 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz

v02.0209
1
Typical Applications
This HMC-ALH310 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
Functional Diagram
HMC-ALH310
GaAs HEMT LOW NOISE
AMPLIFIER, 37 - 42 GHz
Features
Noise Figure: 3.5 dB
P1dB: +12 dBm
Gain: 22 dB
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.80 x 0.73 x 0.1 mm
General Description
The HMC-ALH310 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
37 and 42 GHz. The HMC-ALH310 features 22 dB of
small signal gain, 3.5 dB of noise figure and an output
power of +12 dBm at 1dB compression from a +2.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd = 2.5V, Idd = 52 mA*
Parameter
Min.
Typ.
Frequency Range
37 - 42
Gain
20
22
Noise Figure
3.5
Input Return Loss
4
Output Return Loss
8
Output Power for 1 dB Compression (P1dB)
12
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
52
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd_total = 52 mA
Max.
4.5
Units
GHz
dB
dB
dB
dB
dBm
mA
1 - 138
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com