HMC-ALH102 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz

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Typical Applications
This HMC-ALH102 is ideal for:
• Wideband Communications Receivers
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC-ALH102
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Features
Noise Figure: 2.5 dB
Gain: 11.6 dB @ 10 GHz
P1dB Output Power: +10 dBm
Supply Voltage: +2V @ 55 mA
Die Size: 3.0 x 1.435 x 0.1 mm
General Description
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise
Distributed Amplifier die which operates between
2 and 20 GHz. The amplifier provides 11.6 dB of gain
at 10 GHz, 2.5 dB noise figure and +10 dBm of out-
put power at 1 dB gain compression while requiring
only 55 mA from a +2V supply voltage. The HMC-
ALH102 amplifier is ideal for integration into Multi-
Chip-Modules (MCMs) due to its small size.
Electrical Specifications, T_A = +25° C, Vdd= 2V ^[1], Idd = 55mA ^[2]
Parameter
Min.
Typ.
Frequency Range
2 - 20
Gain
8
10
Input Return Loss
15
Output Return Loss
12
Output Power for 1 dB Compression
8
10
Noise Figure
2.5
Supply Current (Idd)
55
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA
Max.
Units
GHz
dB
dB
dB
dBm
dB
mA
1 - 114
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com