HMC-ABH241 Datasheet, PDF (1/3 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz

v00.0907
Typical Applications
This HMC-ABH241 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space
HMC-ABH241
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Features
Output IP3: +25 dBm
P1dB: +17 dBm
Gain: 24 dB
Supply Voltage: +5 V
50 Ohm Matched Input/Output
Die Size: 3.2 x 1.42 x 0.1 mm
Functional Diagram
General Description
The HMC-ABH241 is a four stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
50 and 66 GHz. The HMC-ABH241 provides 24 dB
of gain, and an output power of +17 dBm at 1dB
compression from a +5V supply voltage. All bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
The HMC-ABH241 GaAs HEMT MMIC Medium
Power Amplifier is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications, T_A = +25° C,
Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA ^[2]
Parameter
Min.
Frequency Range
Gain
19
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Saturated Output Power (Psat)
Supply Current (Idd1 + Idd2 + Idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V).
Typ.
50 - 66
24
15
15
17
25
19
220
Max.
Units
GHz
dB
dB
dB
dBm
dBm
dBm
mA
0-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com