HMC-ABH209_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

v02.0209
Typical Applications
This HMC-ABH209 is ideal for:
• Short Haul / High Capacity Links
3
• Wireless LAN Bridges
• Military & Space
HMC-ABH209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 55 - 65 GHz
Features
Output IP3: +25 dBm
P1dB: +16 dBm
Gain: 13 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.2 x 1.22 x 0.1 mm
Functional Diagram
General Description
The HMC-ABH209 is a high dynamic range, two
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 55 and 65 GHz. The HMC-
ABH209 provides 13 dB of gain, and an output power
of +16 dBm at 1dB compression from a +5V supply
voltage. All bond pads and the die backside are
Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-ABH209
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, T_A = +25° C, Vdd= 5V, Idd= 80 mA ^[2]
Parameter
Min.
Typ.
Frequency Range
55 - 65
Gain
12
13
Input Return Loss
13
Output Return Loss
17
Output Power for 1 dB Compression (P1dB)
16
Output Third Order Intercept (IP3)
25
Saturated Output Power (Psat)
18
Supply Current (Idd)
80
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Idd_total = 80 mA
Max.
Units
GHz
dB
dB
dB
dBm
dBm
dBm
mA
3 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com