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| BB501M Datasheet, PDF (9/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |||
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Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
VDS = VG1 = 5 V
40
VG2S = 4 V
R G = 47 kÐ
50
4
3
2
1
0
Gate2 to Source Voltage V G2S (V)
BB501M
9
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